IMPORTANT NOTICE: Campus Network Outage (Upgrade)

On Friday, July 31st between 7:00AM and 6:00PM; ALL Systems in ALL Buildings (including NHHEC) will be affected as there will be NO Voice, NO Data, and NO Wireless connections to any building during this time.  Blackboard Users: From off-campus, you will be able to access Blackboard during the network outage by using the following link: https://hudsonccc.blackboard.com/


  • EET-214 : Active Circuit Analysis & Design

    Academic Level:
    Undergraduate
    Department:
    Technology
    Subject:
    Electronics Engineering Tech
    Prerequisites:
    110
    Corequisites:
    None
    Credits:
    4
    Continuation of EET 212, Active Electronics Devices. Bipolar junction transistor (BJT) small signal multistage amplifiers, decibels, and power amplifiers are studied. Junction field effect and metal-oxide-silicon field effect transistor biasing, and small-signal operations are covered. Consideration will be given to the frequency response characteristics of BJT and JFET circuits. The experiments study the performance of small-signal amplifiers, connected in the common-emitter mode, the emitter-follower mode, and the common-based mode, followed by an analysis of cascaded RC coupled amplifiers. The analysis and design of biasing, and FET small-signal amplifiers. The final experiment is a detailed analysis of the frequency response of a transistor amplifier.